SURFACE-DIFFUSION DURING MBE GROWTH OF GAAS-ALGAAS SINGLE QUANTUM WELLS ON VICINAL SURFACES

被引：13
作者：
KANAMOTO, K
FUJIWARA, K
TOKUDA, Y
TSUKADA, N
ISHII, M
NAKAYAMA, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90400-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：273 / 276
页数：4
相关论文
共 10 条
[1]   ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].
ASAI, H .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :425-433
[2]   CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES [J].
BIMBERG, D ;
CHRISTEN, J ;
FUKUNAGA, T ;
NAKASHIMA, H ;
MARS, DE ;
MILLER, JN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1191-1197
[3]   (ALAS)0.5(GAAS)0.5 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FUKUI, T ;
SAITO, H .
APPLIED PHYSICS LETTERS, 1987, 50 (13) :824-826
[4]   PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE [J].
HORIKOSHI, Y ;
KAWASHIMA, M ;
YAMAGUCHI, H .
APPLIED PHYSICS LETTERS, 1987, 50 (23) :1686-1687
[5]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].
NEAVE, JH ;
DOBSON, PJ ;
JOYCE, BA ;
ZHANG, J .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102
[6]   THEORETICAL-STUDY OF MODE TRANSITION BETWEEN 2D-NUCLEATION AND STEP FLOW IN MBE GROWTH OF GAAS [J].
NISHINAGA, T ;
CHO, KI .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L12-L14
[7]   STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :620-622
[8]   EXTRINSIC EFFECTS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS FROM MBE GAAS [J].
PUKITE, PR ;
VANHOVE, JM ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :243-248
[9]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENT OF SURFACE-DIFFUSION DURING THE GROWTH OF GALLIUM-ARSENIDE BY MBE [J].
VANHOVE, JM ;
COHEN, PI .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :13-18
[10]   MOBILITY ANISOTROPY AND MAGNETORESISTANCE AT AN (INAS)1(GAAS)1-INP HETEROINTERFACE GROWN ON A (001) VICINAL INP SUBSTRATE [J].
YAMADA, S ;
FUKUI, T ;
SAITO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :960-963
1