EFFECTS OF POST-NITRIDATION ANNEALS ON RADIATION HARDNESS IN RAPID THERMAL NITRIDED GATE OXIDES

被引：16
作者：
LO, GQ
SHIH, DK
TING, W
KWONG, DL
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期
关键词：
D O I：
10.1063/1.102028
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2405 / 2407
页数：3
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