FORMATION ENERGIES OF A VACANCY IN PURE CU, CU-SI, CU-GA AND CU-GAMMAMN SOLID-SOLUTIONS BY POSITRON-ANNIHILATION

被引：35

作者：

FUKUSHIMA, H ^{[1
]}

DOYAMA, M ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT MET & MAT SCI,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF PHYSICS F-METAL PHYSICS | 1976年 / 6卷 / 05期

关键词：

D O I：

10.1088/0305-4608/6/5/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：677 / 685

页数：9

共 29 条

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[2]

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[4]

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[5] STUDIES OF VACANCIES AND VACANCY-IMPURITY PAIRS IN CU-0.5 AT PERCENT GE BY MEANS OF POSITRON-ANNIHILATION [J].

DOYAMA, M ;

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[6]

Doyama M., 1973, Crystal Lattice Defects, V4, P139

[7]

Doyama M., 1973, Proceedings of the 2nd International Conference on the Properties of Liquid Metals, P629

[8]

GALLAGHER PC, 1970, METALL TRANS, V1, P2429

[9] VACANCY-SILICON BINDING-ENERGY IN ALUMINUM BY POSITRON-ANNIHILATION [J].

KIM, SM ;

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MARTEL, P ;

HOOD, GM .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1974, 4 (03) :343-350

[10] EVALUATION OF FORMATION ENTROPY OF A SINGLE VACANCY BY MEANS OF POSITRON-ANNIHILATION [J].

KURIBAYA.K ;

TANIGAWA, S ;

NANAO, S ;

DOYAMA, M .

SOLID STATE COMMUNICATIONS, 1973, 12 (11) :1179-1182

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