CALCULATION OF ELECTRON PROPAGATION IN HETEROSTRUCTURES

被引:14
作者
PRICE, PJ
机构
[1] IBM, T. J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, T. J. Watson Research Cent, Yorktown Heights, NY, USA
关键词
SEMICONDUCTOR DEVICES - Mathematical Models;
D O I
10.1016/0749-6036(86)90022-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Analytical and numerical methods in theory of quantum-mechanical propagation of electrons in parallel-geometry heterostructures, allowing for inhomogeneous effective mass and including interfaces, are presented: an algorithm for numerical computation of transmission probability, a treatment of the residual reflection probability in a graded structure, a discussion of resonant tunneling, and a general quantum-mechanical formulation of tunneling theory.
引用
收藏
页码:213 / 218
页数:6
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