EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON-NITRIDE FILMS PREPARED IN THE TEMPERATURE-RANGE 50-300-DEGREES-C

被引：7

作者：

LING, CH

KWOK, CY

PRASAD, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.1238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1238 / 1239

页数：2

共 9 条

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