INGAAS/GAAS/INGAP MULTIPLE-QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

We report on the first room-temperature operation of aluminum-free In0.2Ga0.8As/GaAs/In0.49Ga0.51P multiple-quantum-well lasers grown by gas-source molecular beam epitaxy. These lasers have low threshold current density J(th) of 177 A/cm2, high internal quantum efficiency of 91%, and low internal waveguide loss of 9.1 cm-1. The characteristic temperature T0 is 150 K, which is the highest value ever reported. These results demonstrate that gas-source molecular beam epitaxy is suitable for growing high-quality In0.2Ga0.8As/GaAs/In0.49Ga0.51P lasers.