ATOM-PROBE STUDY OF AL-GA EXCHANGE-REACTION AT AL-GAAS INTERFACES

被引：25

作者：

NISHIKAWA, O

KANEDA, O

SHIBATA, M

NOMURA, E

机构：

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.53.1252

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1252 / 1255

页数：4

共 14 条

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[2] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].

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BAUER, RS ;

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[3] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

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[5] ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS [J].

KAHN, A ;

CARELLI, J ;

KANANI, D ;

DUKE, CB ;

PATON, A ;

BRILLSON, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :331-334

[6] ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES [J].

KAHN, A .

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[7]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[8] ENERGY DEFICITS IN PULSED FIELD EVAPORATION AND DEFICIT COMPENSATED ATOM-PROBE DESIGNS [J].

MULLER, EW ;

KRISHNASWAMY, SV .

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[9] ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION .2. NI-SI SYSTEM [J].

NISHIKAWA, O ;

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WADA, M ;

TSUNASHIMA, Y ;

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UEMORI, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :10-14

[10] PERFORMANCE OF THE NEW HIGH MASS RESOLUTION TIME OF FLIGHT ATOM PROBE [J].

NISHIKAWA, O ;

KURIHARA, K ;

NACHI, M ;

KONISHI, M ;

WADA, M .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (06) :810-818

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