INVESTIGATION OF PLASMA ETCH INDUCED DAMAGE IN COMPOUND SEMICONDUCTOR-DEVICES

被引：11

作者：

SHUL, RJ ^{[1
]}

LOVEJOY, ML ^{[1
]}

HETHERINGTON, DL ^{[1
]}

RIEGER, DJ ^{[1
]}

VAWTER, GA ^{[1
]}

KLEM, JF ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.579320

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the electrical performance of mesa-isolated GaAs pn-junction diodes to determine the plasma-induced damage effects from reactive ion and reactive ion beam etching (REBE). A variety of plasma chemistries (SiCl4, BCl3, BCl3/Cl2, and Cl2) and ion energies ranging from 100 to 400 eV were studied. We have observed that many of the reactive ion etching BCl3/Cl2 plasmas and RIBE Cl2 plasmas yield diodes with low reverse-bias currents that are comparable to the electrical characteristics of wet-chemical-etched devices. The reverse-bias leakage currents are independent of surface morphology and sidewall profiles.

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页码：1351 / 1355

页数：5

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