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- [42] CONDUCTIVITY AND HALL-COEFFICIENT OF GRADED-COMPOSITION EPITAXIAL CDXHG1-XTE LAYERS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02): : 639 - 646
- [45] Epitaxial growth of ZnSe on Si(111) with lattice-matched layered InSe buffer layers JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (9AB): : L1062 - L1064
- [46] Effect of lattice strain on exciton energy of AgGaS2 epitaxial layers on GaAs (100) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4A): : 1898 - 1904
- [47] Lattice strain in AgGaS2 epitaxial layers grown on GaAs (100) by multisource evaporation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (08): : 4527 - 4532
- [48] Determination of the lattice constant of CrS from Mn1-xCrxS MBE epitaxial layers PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (04): : 778 - 781
- [50] A NOVEL GAINAS/GAAS HETEROSTRUCTURE INTERDIGITAL PHOTODETECTOR (HIP) USING LATTICE MISMATCHED EPITAXIAL LAYERS PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 439 : 202 - 206