NATIVE HOLE TRAP IN BULK GAAS AND ITS ASSOCIATION WITH THE DOUBLE-CHARGE STATE OF THE ARSENIC ANTISITE DEFECT

被引:94
作者
LAGOWSKI, J
LIN, DG
CHEN, TP
SKOWRONSKI, M
GATOS, HC
机构
关键词
D O I
10.1063/1.95983
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:929 / 931
页数:3
相关论文
共 13 条
[1]  
Baraff G. A., 1984, Semi-Insulating III-V materials, P416
[2]   ASGA-INDUCED DICHROISM IN GAAS [J].
KAUFMANN, U .
PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1332-1332
[3]   ELECTRICAL-PROPERTIES OF FE IN GAAS [J].
KLEVERMAN, M ;
OMLING, P ;
LEDEBO, LA ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :814-819
[4]  
LAGOWSKI J, 1985, DEFECTS SEMICONDUCTO, P73
[5]   ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].
Lucovsky, G. .
SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302
[6]  
Makram-Ebeid S., 1984, Semi-Insulating III-V materials, P184
[7]   ASGA ANTISITES AND THEIR RELATION TO EL2 DEFECTS IN GAAS [J].
MEYER, BK ;
SPAETH, JM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (04) :L99-L103
[8]   DEEP LEVELS IN WIDE BAND-GAP III-V-SEMICONDUCTORS [J].
NEUMARK, GF ;
KOSAI, K .
SEMICONDUCTORS AND SEMIMETALS, 1983, 19 (0C) :1-74
[9]  
PARSEY JM, 1982, J ELECTROCHEM SOC, V129, P389
[10]   VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
TANIGUCHI, M ;
IKOMA, T .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6448-6451