INTERSUBBAND SCATTERING IN A 2D ELECTRON-GAS

被引：139
作者：
COLERIDGE, PT
机构：
[1] Div. of Phys., Nat. Res. Council, Ottawa, Ont.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 09期
关键词：
D O I：
10.1088/0268-1242/5/9/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique, using the absolute amplitude of the low-field Shubnikov-de Haas oscillations, is presented which allows the direct measurement of inter-subband scattering in 2D heterojunction structures. When applied to a heterojunction with two subbands occupied the technique is used to show that inter-subband scattering is independent of temperature between 1 and 4 K. In agreement with previous reports frequency and amplitude intermodulation, which increases with temperature, is also observed. This is attributed to mixing, by thermal or impurity damping, between the two sets of oscillations in the Fermi energy. This explanation is supported by a model calculation which reproduces the features of the experimental results.
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收藏
页码：961 / 966
页数：6
相关论文
共 11 条
[1]  
Stormer HL, Gossard AC, Weigmann W, Solid State Commun., 41, 10, (1982)
[2]  
Smith TP, Fang FF, Meirav U, Heiblum M, Phys. Rev., 38, 17, (1988)
[3]  
van Houten H, Williamson JG, Brooekaart MEI, Foxon CT, Harris JJ, Phys. Rev., 37, 5, (1988)
[4]  
Fletcher R, Zaremba E, D'Iorio M, Foxon CT, Harris JJ, Phys. Rev., 41, 15, (1990)
[5]  
Harrang JP, Tardella A, Razeghi M, Weimann G, Bull. Am. Phys. Soc., 31, (1986)
[6]  
Leadley DR, Nicholas RJ, Harris JJ, Foxon CT, Semicond. Sci. Technol., 4, 10, (1989)
[7]  
Coleridge PT, Stoner R, Fletcher R, Phys. Rev., 39, 2, (1989)
[8]  
Kaiser JF, Reed WA, Rev. Sci. Instrum., 49, 8, (1978)
[9]  
Blom FAP, Fontein PF, Wolter JH, Peeters FM, Wu X, Geerinckx F, Devreese JT, (1989)
[10]  
Fletcher R, (1990)
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