ANISOTROPIC ETCHING BEHAVIOR OF GALLIUM-ARSENIDE JUNCTIONS

被引：7

作者：

STIRLAND, DJ ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,CASWELL,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1974年 / 9卷 / 06期

关键词：

D O I：

10.1007/BF00570391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：969 / 980

页数：12

共 13 条

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[6]

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[8] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].

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[9]

HUBER AM, 1970, 3RD P INT S GALL ARS, P118

[10] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

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