HYDROGEN-INDUCED POSITIVE CHARGING OF BURIED SIO2

被引：9

作者：

VANHEUSDEN, K

STESMANS, A

机构：

[1] Department of Physics, Katholieke Universiteit Leuven

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90190-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simple hydrogen annealing of the buried oxide (BOX) in the range 450 -700-degrees-C was found to introduce net positive charge with areal densities greater-than-or-equal-to 5 x 10(12) cm-2, while H-2 annealing in the range 700 - 1000-degrees-C was observed to activate a neutral state. Both processes appeared reversible upon appropriate vacuum annealing. The charge was sensed in a novel way - using electron spin resonance - through its band bending effect on probed defects in Si layers close to the BOX. A tentative model based on hydrogen incorporation into oxygen vacancies (Si-Si bonds) may account for the results.

引用

页码：371 / 374

页数：4

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