CHARACTERIZATION OF THIN SURFACE-LAYERS BY AN X-RAY DOUBLE-CRYSTAL METHOD WITH A SAMPLE DESIGNATED AS THE 1ST CRYSTAL

被引：3

作者：

ITOH, N

机构：

[1] Department of Electronics, College of Engineering, University of Osaka Prefecture, Sakai, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8A期

关键词：

X-RAY DIFFRACTION; FWHM; CHARACTERIZATION; THIN SURFACE LAYER; GAAS; LAPPING;

D O I：

10.1143/JJAP.31.L1140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that thin surface layers can be sensitively characterized by using an X-ray double-crystal method, in which a sample designated as the first crystal is irradiated with incident X-rays at a low glancing angle and the X-rays reflected from the surface layer are analyzed by a second crystal. The applicability is proved by observing GaAs crystals lapped with fine abrasives. Deviation of the full width at half-maximum (FWHM) of the rocking curve for lapped crystals from that of a perfect crystal is a few times larger than the value obtained by the conventional method in which the sample is the second crystal.

引用

页码：L1140 / L1142

页数：3

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