KINETICS OF FREE-EXCITON LUMINESCENCE IN GAAS

被引：19

作者：

AAVIKSOO, J ^{[1
]}

REIMAND, I ^{[1
]}

ROSSIN, VV ^{[1
]}

TRAVNIKOV, VV ^{[1
]}

机构：

[1] AF IOFFE PHYSICOTECH INST,LENINGRAD 194021,USSR

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.45.1473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton-polariton photoluminescence kinetics under short-pulse excitation in nominally undoped GaAs has been investigated. A delayed onset revealing the energy relaxation of electrons and polaritons has been observed. In an ultrapure sample (N(D) approximately 10(12) cm-3) the maximum luminescence is reached after a considerable delay of 4 ns. Energy relaxation speeds up with an increase in impurity concentration and depends on the type of conductivity. At a high repetition rate, the next excitation pulse causes fast quenching of polariton luminescence in the vicinity of exciton resonance because of heating of excitons by photoexcited hot electrons.

引用

页码：1473 / 1476

页数：4

共 16 条

[1]

AAVIKSOO J, 1989, FIZ TVERD TELA+, V31, P203

[2] LUMINESCENCE FROM EXCITON POLARITONS IN WEAKLY EXCITED GAAS BASED ON EXCITON-ELECTRON COLLISIONS [J].