EQUIVALENCE BETWEEN RESONANT TUNNELING AND SEQUENTIAL TUNNELING IN DOUBLE-BARRIER DIODES

被引：198
作者：
WEIL, T
VINTER, B
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 18期
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D O I：
10.1063/1.97884
中图分类号：
O59 [应用物理学];
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页码：1281 / 1283
页数：3
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