ELECTRON-ELECTRON INTERACTION IN GAPLESS SEMICONDUCTORS

被引：14

作者：

GELMONT, BL ^{[1
]}

IVANOVOMSKII, VI ^{[1
]}

OGORODNIKOV, VK ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, LENINGRAD, USSR

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1975年 / 69卷 / 02期

关键词：

D O I：

10.1002/pssb.2220690247

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：717 / 723

页数：7

共 12 条

[1] Some Properties of Gapless Semiconductors of the Second Kind [J].

Abrikosov, A. A. ;

Beneslavskii, S. D. .

[2]

Abrikosov A. A., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V59, P1280

[3]

ABRIKOSOV AA, 1974, ZH EKSP TEOR FIZ+, V66, P1443

[4] EVIDENCE FOR A DIELECTRIC SINGULARITY IN HGSE AND HGTE [J].

BROERMAN, JG .

PHYSICAL REVIEW B, 1970, 2 (06) :1818-&

[5]

BROERMAN JG, 1972, P INT C PHYS SEMICON

[6]

Gel'mont B. L., 1972, Soviet Physics - JETP, V35, P377

[7]

GELMONT BL, 1972, SOV PHYS SEMICOND, V5, P266

[8]

HINKLEY ED, 1964, PHYS REV A-GEN PHYS, V134, P1261

[9]

Ivanov-Omskii V. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P264

[10] STATIC DIELECTRIC FUNCTION OF A ZERO-GAP SEMICONDUCTOR [J].

LIU, L ;

BRUST, D .