INVESTIGATIONS ON PD/IN-BASED HIGH-TEMPERATURE STABLE OHMIC CONTACTS ON GAAS BY X-RAY REFLECTOMETRY AND DIFFRACTOMETRY

被引：3

作者：

PIRLING, T ^{[1
]}

FRICKE, K ^{[1
]}

SCHUSSLER, M ^{[1
]}

LEE, WY ^{[1
]}

FUESS, H ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] TH DARMSTADT,INST HOCHFREQUENZTECH,D-64283 DARMSTADT,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

OHMIC CONTACT; INDIUM PALLADIUM; GALLIUM ARSENIDE; X-RAY DIFFRACTION;

D O I：

10.1016/0921-5107(94)04032-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray investigations of a high temperature stable contact system based on Pd/In/Pd/W are presented. The contact system for n- and p-type GaAs is designed for long-term stability on GaAs at ambient temperatures up to 400 degrees C.

引用

页码：70 / 73

页数：4

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