STRAIN ANALYSIS OF SILICON-ON-INSULATOR FILMS PRODUCED BY ZONE-MELTING RECRYSTALLIZATION

被引：8

作者：

ZAVRACKY, PM

ADAMS, GG

AQUILINO, PD

机构：

[1] Department of Electrical and Computer Engineering, Northeastern University, Boston, MA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 1995年 / 4卷 / 01期

关键词：

D O I：

10.1109/84.365369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-on-Insulator (SOT) wafers produced by the Zone-Melting-Recrystallization (ZMR) method were evaluated to determine the level of built-in strain, Micromechanical strain measurement structures were produced by surface micromachining the thin film silicon epitaxial layer, A variety of test structures and a new tensile strain measurement device were used to determine the level of strain in the material, Results indicated that the maximum strain in the ZMR IR material is less than 2 x 10(-4) and that there is a significant orientation dependence.

引用

页码：42 / 48

页数：7

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