共 50 条
[32]
Photocurrent and photoluminescence affected by Γ-x electron transfer in type-I GaAs/AlAs superlattices
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1998, 37 (3B)
:1646-1649
[33]
Homogeneous linewidth of type-I localized excitons in type-II GaAs/AlAs superlattices
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
2002, 190 (03)
:693-697
[36]
GAMMA-X MIXING IN TYPE-II GAAS/ALAS SHORT-PERIOD SUPERLATTICES
[J].
JOURNAL DE PHYSIQUE IV,
1993, 3 (C5)
:237-240
[37]
Luminescence dynamics in GaAs/AlAs superlattices near the type-I/type-II crossover
[J].
Journal of Luminescence,
1997, 72-74
:350-352
[38]
Effect of the type-I to type-II transition on the binding energy of shallow donors in GaAs/AlAs quantum wells
[J].
PHYSICAL REVIEW B,
1997, 55 (23)
:15420-15422
[39]
EFFECT OF MAGNETIC-FIELDS ON EXCITON BINDING-ENERGIES IN TYPE-II GAAS-ALAS QUANTUM-WELL STRUCTURES
[J].
PHYSICAL REVIEW B,
1991, 44 (20)
:11196-11202
[40]
BINDING-ENERGIES OF EXCITONS IN TYPE-II GAAS-ALAS QUANTUM-WELL STRUCTURES IN THE PRESENCE OF A MAGNETIC-FIELD
[J].
PHYSICAL REVIEW B,
1991, 44 (19)
:10913-10916