ANISOTROPY OF HIGH-TEMPERATURE HARDNESS IN 6H SILICON-CARBIDE

被引：26

作者：

FUJITA, S

MAEDA, K

HYODO, S

机构：

[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1986年 / 5卷 / 04期

关键词：

D O I：

10.1007/BF01672358

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：450 / 452

页数：3

共 10 条

[1] DISLOCATIONS IN SILICON CARBIDE [J].

AMELINCKX, S ;

STRUMANE, G ;

WEBB, WW .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1359-1370

[2] ANISOTROPY IN HARDNESS OF SINGLE CRYSTALS [J].

BROOKES, CA ;

ONEILL, JB ;

REDFERN, BAW .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 322 (1548) :73-&

[3] KINETICS AND MECHANISMS OF HIGH-TEMPERATURE CREEP IN SILICON-CARBIDE .1. REACTION-BONDED [J].

CARTER, CH ;

DAVIS, RF ;

BENTLEY, J .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1984, 67 (06) :409-417

[4]

DANIELS FW, 1949, T AM SOC METAL, V41, P419

[5]

FEENG C, 1958, T TMS AIME, V212, P47

[6] HARDNESS ANISOTROPY OF SINGLE-CRYSTALS OF IVA-DIBORIDES [J].

NAKANO, K ;

IMURA, T ;

TAKEUCHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (02) :186-189

[7] GROWTH, MORPHOLOGY AND SLIP SYSTEM OF ALPHA-SI3N4 SINGLE-CRYSTAL [J].

NIIHARA, K ;

HIRAI, T .

JOURNAL OF MATERIALS SCIENCE, 1979, 14 (08) :1952-1960

[8] MOTION OF PARTIAL DISLOCATION IN SILICON-CARBIDE [J].

PILYANKEVICH, AN ;

BRITUN, VF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02) :449-457

[9] MICROHARDNESS ANISOTROPY OF SILICON-CARBIDE [J].

SAWYER, GR ;

SARGENT, PM ;

PAGE, TF .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (04) :1001-1013

[10] EFFECT OF CRYSTAL ORIENTATION ON HARDNESS OF SILICON CARBIDE [J].

SHAFFER, PTB .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (09) :466-466

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