EFFECTS OF A HIGH-TEMPERATURE HYDROGEN ANNEAL ON THE MEMORY RETENTION OF METAL-NITRIDE-OXIDE-SILICON TRANSISTORS AT ELEVATED-TEMPERATURES

被引：13

作者：

MAES, HE

USMANI, SH

HEYNS, GL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4348 / 4350

页数：3

相关论文

共 8 条

[1] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS
ELLIOT, ABM
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247
[2] A 16 KBIT ELECTRICALLY ERASABLE PROM USING N-CHANNEL SI-GATE MNOS TECHNOLOGY
HAGIWARA, T
YATSUDA, Y
KONDO, R
MINAMI, SI
AOTO, T
ITOH, Y
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) : 346 - 353
[3] RETENTION TESTING OF MNOS LSI MEMORIES
JEPPSON, KO
SVENSSON, CM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (04) : 723 - 729
[4] DISCHARGE OF MNOS STRUCTURES AT ELEVATED-TEMPERATURES
LUNDKVIST, L
SVENSSON, C
HANSSON, B
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 221 - 227
[5] LOW-FIELD TRANSIENT-BEHAVIOR OF MNOS DEVICES
MAES, HE
VANOVERSTRAETEN, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 664 - 666
[6] INFLUENCE OF A HIGH-TEMPERATURE HYDROGEN ANNEAL ON THE MEMORY CHARACTERISTICS OF PARA-CHANNEL MNOS TRANSISTORS
MAES, HE
HEYNS, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2706 - 2713
[7] MAES HE, 1979, 3RD IEEE NVSM WORKSH
[8] YATSUDA Y, 1979, 11TH P C SOL STAT DE