PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION

被引：102
作者：
SWANN, RCG
MEHTA, RR
CAUGE, TP
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 07期
关键词：
D O I：
10.1149/1.2426714
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：713 / &
相关论文
共 18 条
[1]  
BABAT GI, 1947, J I ELECT ENG 3, P94
[2]  
BROWN GA, ELECTROCHEMICAL SOCI
[3]   PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].
DOO, VY ;
NICHOLS, DR ;
SILVEY, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1279-&
[4]   ZUR KENNTNIS DES SYSTEMS SILICIUM-STICKSTOFF [J].
GLEMSER, O ;
BELTZ, K ;
NAUMANN, P .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1957, 291 (1-4) :51-66
[5]  
GRIECO MJ, 1966, ELECTROCHEMICAL SOCI
[6]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[7]  
HU SM, 1966, J ELECTROCHEM SOC, V113, P695
[8]  
HU SM, 150 EL SOC M ABSTR
[9]  
JANUS AR, 149 EL SOC M ABSTR
[10]  
JANUS AR, 1966, JUN P S DEP THIN FIL
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