OPERATION AND DEVICE APPLICATIONS OF A VALVED-PHOSPHORUS CRACKER IN SOLID-SOURCE MOLECULAR-BEAM EPITAXY

Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance, x-ray diffraction, and transmission electron microscopy. The first microwave performance (ft = 44 GHz, fmax = 65 GHz) of an InGaP/GaAs heterojunction bipolar transistor grown by solid-phosphorus source is reported.