EFFECTS OF GATE RECESS ETCHING ON SOURCE RESISTANCE

被引：1
作者：
CIBUZAR, GT
机构：
[1] University of Minnesota Microelectronics Laboratory, Minneapolis
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期
关键词：
D O I：
10.1109/16.387259
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recessed gate microwave MESFET's and MODFET's have a recessed but unmetallized length L(delta) of the channel adjacent to the gate, whose resistance R(delta) can significantly contribute to the source resistance R(s). The ratio R(delta)/R(s) can be determined using common test structures.
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页码：1195 / 1196
页数：2
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