GRADED-BANDGAP 3-5 TERNARY COMPOUND FILMS BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

TATEISHI, K ^{[1
]}

NAGANUMA, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,FAC ENGN,DEPT PHYS ELECTR,MEGURO KU,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 05期

关键词：

D O I：

10.1143/JJAP.15.785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：785 / 789

页数：5

共 12 条

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

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[2] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1974, 25 (04) :224-226

[3] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

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JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[4] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[5] INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].

CHO, AY ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1812-1817

[6] EPITAXIAL INDIUM ARSENIDE BY VACUUM EVAPORATION [J].

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BRUNNSCH.A .

SOLID-STATE ELECTRONICS, 1970, 13 (01) :47-&

[7]

HONIG RE, 1969, RCA REV, V30, P285

[8] GRADED-BAND-GAP PGA1-XALXAS-NGAAS HETEROJUNCTION SOLAR CELLS [J].

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3542-3546

[9]

KROEMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P223

[10] GAAS FET PREPARED WITH MOLECULAR-BEAM EPITAXIAL-FILMS [J].

NAGANUMA, M ;

KAMIMURA, K ;

TAKAHASHI, K ;

SAKAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) :581-582

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