A TECHNIQUE FOR THE DETERMINATION OF STRESS IN THIN-FILMS

被引:155
作者
BROMLEY, EI
RANDALL, JN
FLANDERS, DC
MOUNTAIN, RW
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期
关键词
D O I
10.1116/1.582744
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1364 / 1366
页数:3
相关论文
共 14 条
[1]   MECHANICAL STRENGTH OF THIN FILMS OF METALS [J].
BEAMS, JW ;
BREAZEALE, JB ;
BART, WL .
PHYSICAL REVIEW, 1955, 100 (06) :1657-1661
[2]  
Beams W., 1959, P INT C STRUCTURE PR, P183
[3]   CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J].
BRENNER, A ;
SENDEROFF, S .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02) :105-123
[4]   SURFACE CHARGES INDUCED BY MECHANICAL STRESSES IN SILICON-SILICON OXIDE INTERFACE [J].
FRIEDRICH, H .
SOLID-STATE ELECTRONICS, 1971, 14 (07) :639-+
[5]   MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].
JACCODINE, RJ ;
SCHLEGEL, WA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+
[6]   PENETRATION OF MAGNETIC FIELDS INTO SUPERCONDUCTORS .3. MEASUREMENTS ON THIN FILMS OF TIN, LEAD AND INDIUM [J].
LOCK, JM .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 208 (1094) :391-408
[7]   HIGH-RESOLUTION ION-BEAM LITHOGRAPHY AT LARGE GAPS USING STENCIL MASKS [J].
RANDALL, JN ;
FLANDERS, DC ;
ECONOMOU, NP ;
DONNELLY, JP ;
BROMLEY, EI .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :457-459
[8]   SILICON-NITRIDE SINGLE-LAYER X-RAY MASK [J].
SEKIMOTO, M ;
YOSHIHARA, H ;
OHKUBO, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04) :1017-1021
[9]   THERMAL-STRESSES AND CRACKING RESISTANCE OF DIELECTRIC FILMS (SIN, SI3N4, AND SIO2) ON SI SUBSTRATES [J].
SINHA, AK ;
LEVINSTEIN, HJ ;
SMITH, TE .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2423-2426
[10]  
SMITH DO, 1959, J APPL PHYS, V30, P264