X-RAY CHARACTERIZATION OF SINGLE-CRYSTAL FE FILMS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

QADRI, SB ^{[1
]}

GOLDENBERG, M ^{[1
]}

PRINZ, GA ^{[1
]}

FERRARI, JM ^{[1
]}

机构：

[1] USN,RES LAB,CODE 6635,WASHINGTON,DC 20375

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：718 / 721

页数：4

共 50 条

[41] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SINGLE-CRYSTAL AL FILMS ON GAAS (110)
PRINZ, GA
FERRARI, JM
GOLDENBERG, M
APPLIED PHYSICS LETTERS, 1982, 40 (02) : 155 - 157
[42] Properties of a Fe/GaAs(001) hybrid structure grown by molecular-beam epitaxy
Chye, Y
Huard, V
White, ME
Petroff, PM
APPLIED PHYSICS LETTERS, 2002, 80 (03) : 449 - 451
[43] THERMAL-BEHAVIOR OF ALUMINUM FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS
BANGERT, U
TANG, B
MISSOUS, M
JOURNAL OF CRYSTAL GROWTH, 1995, 154 (3-4) : 223 - 230
[44] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WOOD, CEC
JOYCE, BA
JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4854 - 4861
[45] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
CHAI, YG
CHOW, R
APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[46] ACHIEVEMENTS AND LIMITATIONS IN OPTIMIZED GAAS FILMS GROWN ON SI BY MOLECULAR-BEAM EPITAXY
GEORGAKILAS, A
PANAYOTATOS, P
STOEMENOS, J
MOURRAIN, JL
CHRISTOU, A
JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) : 2679 - 2701
[47] GROWTH OF SINGLE-CRYSTAL BCC ALPHA-FE ON ZNSE VIA MOLECULAR-BEAM EPITAXY
PRINZ, GA
JONKER, BT
KREBS, JJ
FERRARI, JM
KOVANIC, F
APPLIED PHYSICS LETTERS, 1986, 48 (25) : 1756 - 1758
[48] DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
BLOOD, P
HARRIS, JJ
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 993 - 1007
[49] GAAS/GAALAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WEIMANN, G
SCHLAPP, W
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C99 - C99
[50] SILICON AUTOCOMPENSATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
BALLINGALL, JM
MORRIS, BJ
LEOPOLD, DJ
RODE, DL
JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3571 - 3573

← 1 2 3 4 5 →