MODIFICATION OF SILICON PROPERTIES WITH LASERS, ELECTRON-BEAMS, AND INCOHERENT-LIGHT

被引：6
作者：
CELLER, GK
机构：
来源：
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1984年 / 12卷 / 03期
关键词：
D O I：
10.1080/01611598408244069
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：193 / 265
页数：73
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共 206 条
[1]  
ANDERSON CL, 1980, LASER ELECTRON BEAM
[2]   SILICON MICROMECHANICAL DEVICES [J].
ANGELL, JB ;
TERRY, SC ;
BARTH, PW .
SCIENTIFIC AMERICAN, 1983, 248 (04) :44-&
[3]  
[Anonymous], 1982, LASER ANNEALING SEMI
[4]  
ANTONIADIS DA, 1978, 50192 STANF U TECH R
[5]  
APPLETON BR, 1982, LASER ELECTRON BEAM
[6]  
ARAI T, 1981, 28TH P C JPN APPL PH, P557
[7]  
ASPNES DE, 1980, LASER ELECTRON BEAM, P414
[8]  
AUSTON, 1979, LASER SOLID INTERACT, V50, P11
[9]   DYNAMICS OF Q-SWITCHED LASER ANNEALING [J].
AUSTON, DH ;
GOLOVCHENKO, JA ;
SIMONS, AL ;
SURKO, CM ;
VENKATESAN, TNC .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :777-779
[10]   MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797
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