DIRECT WRITING OF GAAS MONOLAYERS BY LASER-ASSISTED ATOMIC LAYER EPITAXY

被引：37
作者：
KARAM, NH
LIU, H
YOSHIDA, I
BEDAIR, SM
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 14期
关键词：
D O I：
10.1063/1.99186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1144 / 1146
页数：3
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