LOW-CAPACITANCE PBTE PHOTODIODES

被引：12

作者：

HOLLOWAY, H ^{[1
]}

YEUNG, KF ^{[1
]}

机构：

[1] FORD MOTOR CO,RES STAFF,DEARBORN,MI 48121

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 04期

关键词：

D O I：

10.1063/1.89338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：210 / 212

页数：3

共 9 条

[1] HIGH-SPEED PB1-XSNXTE PHOTODIODES [J].

ANDREWS, AM ;

PASKO, JG ;

GERTNER, ER ;

HIGGINS, JA ;

LONGO, JT .

APPLIED PHYSICS LETTERS, 1972, 21 (06) :285-&

[2]

BATE RT, 1968, PHYS REV LETT, V13, P180

[3] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION [J].

DONNELLY, JP ;

LINDLEY, WT ;

FOYT, AG ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :279-&

[4] THIN-FILM (PB,SN)SE PHOTODIODES FOR 8-12-MU-M OPERATION [J].

HOHNKE, DK ;

HOLLOWAY, H ;

YEUNG, KF ;

HURLEY, M .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :98-100

[5] INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE [J].

LOGOTHETIS, EM ;

HOLLOWAY, H ;

VARGA, AJ ;

WILKES, E .

APPLIED PHYSICS LETTERS, 1971, 19 (09) :318-+

[6] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES [J].

ROLLS, WH ;

EDDOLLS, DV .

INFRARED PHYSICS, 1973, 13 (02) :143-147

[7]

1974, DAAK0273C0225 CONTR

[8]

1975, DAAK0274C0181 CONTR

[9]

1974, DAAK0274C0124 CONTR

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