THERMAL-EQUILIBRIUM PROCESSES IN UNDOPED AMORPHOUS-SILICON ALLOYS

被引：2

作者：

AGARWAL, SC ^{[1
]}

PAYSON, JS ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.36.9348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9348 / 9350

页数：3

共 11 条

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[7] DETERMINATION OF THE GAP-STATE DISTRIBUTION OF HYDROGENATED AMORPHOUS-SILICON ALLOYS FROM SUB-BAND-GAP ABSORPTION-MEASUREMENTS [J].

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[8] THERMAL-EQUILIBRIUM DEFECT PROCESSES IN HYDROGENATED AMORPHOUS-SILICON [J].

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[9] THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J].

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PHYSICAL REVIEW B, 1986, 34 (04) :3030-3033

[10] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON [J].

STREET, RA ;

KAKALIOS, J ;

TSAI, CC ;

HAYES, TM .

PHYSICAL REVIEW B, 1987, 35 (03) :1316-1333

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