EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES

被引：106
作者：
CHOI, C
OTSUKA, N
MUNNS, G
HOUDRE, R
MORKOC, H
ZHANG, SL
LEVI, D
KLEIN, MV
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期
关键词：
D O I：
10.1063/1.97956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：992 / 994
页数：3
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