PULSED EXCIMER LASER ANNEALING OF ION-IMPLANTED SILICON - CHARACTERIZATION AND SOLAR-CELL FABRICATION

被引：15

作者：

LOWNDES, DH ^{[1
]}

CLELAND, JW ^{[1
]}

CHRISTIE, WH ^{[1
]}

EBY, RE ^{[1
]}

JELLISON, GE ^{[1
]}

NARAYAN, J ^{[1
]}

WESTBROOK, RD ^{[1
]}

WOOD, RF ^{[1
]}

NILSON, JA ^{[1
]}

DASS, SC ^{[1
]}

机构：

[1] LUMON INC,KANATA K2K 1Y3,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期

关键词：

D O I：

10.1063/1.93342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：938 / 940

页数：3

共 11 条

[1]

APPLETON BR, 1982, LASER ELECTRON BEAM

[2] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[3] OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY [J].

JELLISON, GE ;

MODINE, FA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3745-3753

[4]

JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454

[5]

LINDHARD J, 1963, K DAN VIDENSK SELSK, V33

[6] MELTING PHENOMENA AND PULSED-LASER ANNEALING IN SEMICONDUCTORS [J].

NARAYAN, J ;

FLETCHER, J ;

WHITE, CW ;

CHRISTIE, WH .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7121-7128

[7] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J].

NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

[8] MACROSCOPIC THEORY OF PULSED-LASER ANNEALING .2. DOPANT DIFFUSION AND SEGREGATION [J].

WOOD, RF ;

KIRKPATRICK, JR ;

GILES, GE .

PHYSICAL REVIEW B, 1981, 23 (10) :5555-5569

[9]

WOOD RL, UNPUB

[10] LASER PROCESSING FOR HIGH-EFFICIENCY SI SOLAR-CELLS [J].

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1178-1189

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