ACCURATE DETERMINATION OF BANDGAP NARROWING IN HEAVILY-DOPED EPITAXIAL P-TYPE SILICON

被引：2
作者：
GHANNAM, MY
MERTENS, RP
机构：
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90523-T
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bandgap narrowing in p-type epitaxial silicon uniformly doped with boron in the concentration range 2x10(17) to 5x10(18) cm-3 is evaluated from the temperature dependence of the collector current of npn bipolar transistors. The study is focussed on the sensitivity of the extracted bandgap narrowing to the model used to describe the intrinsic carrier concentration in pure silicon.
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页码：691 / 694
页数：4
相关论文
共 10 条
[1]  
Slotboom, De Graaff, Solid St. Electron., 19, (1976)
[2]  
Swirhun, Kwark, Swanson, IEDM Tech. Digest, (1986)
[3]  
Sproul, Green, J. of Applied Physics, 70, (1991)
[4]  
Putley, Mitchell, Proc. Phys. Soc., 72, (1958)
[5]  
Wasserab, Z. Naturforsch, 32, (1977)
[6]  
Morin, Maita, Phys. Rev., 96, (1954)
[7]  
Swirhun, Kane, Swanson, IEDM Tech. Digest, (1988)
[8]  
Klaassen, IEDM Tech. Digest, (1990)
[9]  
Green, J. of Applied Physics, 67, (1990)
[10]  
Klaassen, Slotboom, De Graaff, Solid-St. Electron., 35, (1992)
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