SHALLOW OHMIC CONTACTS TO N-TYPE GAAS AND ALXGA1-XAS

被引：10
|
作者：
ZHENG, LR
WILSON, SA
LAWRENCE, DJ
RUDOLPH, SI
CHEN, S
BRAUNSTEIN, G
机构：
[1] Corporate Research Laboratories, Eastman Kodak Company, Rochester
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 07期
关键词：
D O I：
10.1063/1.106491
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Sequential deposition of Pd/AuGe/Ag/Au and rapid thermal annealing are used to form shallow ohmic contacts to n-GaAs and n-AlxGa1-xAs. Ion backscattering measurements and cross-sectional transmission electron microscopy show limited metal-substrate reaction and uniform interfaces. The metallization on GaAs displays good electrical properties with a contact resistivity of 2.0 x 10(-6) OMEGA cm2 at a carrier concentration of 2 x 10(17) cm-3. The contacts formed on Al0.55Ga0.45As have a contact resistivity of 2.1 x 10(-5) OMEGA cm2 at a carrier concentration of 7.5 x 10(17) cm-3.
引用
收藏
页码：877 / 879
页数：3
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