THE MOBILITY OF NA+, LI+, AND K+ IONS IN THERMALLY GROWN SIO2-FILMS

被引:59
作者
GREEUW, G
VERWEY, JF
机构
关键词
D O I
10.1063/1.334256
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2218 / 2224
页数:7
相关论文
共 16 条
[1]  
Anderson O. L., 1954, J AM CERAM SOC, V37, P573, DOI [DOI 10.1111/J.1151-2916.1954.TB13991.X, 10.1111/j.1151-2916.1954.tb13991.x]
[2]  
BIERSACK JP, 1982, ION IMPLANTATION TEC, P157
[3]   KINETIC-BEHAVIOR OF MOBILE IONS IN THE AL-SIO2-SI SYSTEM [J].
BOUDRY, MR ;
STAGG, JP .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :942-950
[4]   INFLUENCE OF ANNEAL TEMPERATURE ON THE MOBILE ION CONCENTRATION IN MOS STRUCTURES [J].
GREEUW, G ;
BAKKER, S ;
VERWEY, JF .
SOLID-STATE ELECTRONICS, 1984, 27 (01) :77-81
[5]   THEORETICAL SOLUTION OF THE TRANSIENT CURRENT EQUATION FOR MOBILE IONS IN A DIELECTRIC FILM UNDER THE INFLUENCE OF A CONSTANT ELECTRIC-FIELD [J].
GREEUW, G ;
HOENDERS, BJ .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (09) :3371-3375
[6]  
GREEUW G, 1984, THESIS STATE U GRONI
[7]   MOBILITY OF POTASSIUM-IONS IN SIO2 [J].
HILLEN, MW ;
GREEUW, G ;
VERWEIJ, JF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4834-4837
[8]   SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS [J].
HOFSTEIN, SR .
APPLIED PHYSICS LETTERS, 1967, 10 (10) :291-+
[9]   DIRECT MEASUREMENT OF NA+ ION MOBILITY IN SIO2-FILMS [J].
KRIEGLER, RJ ;
DEVENYI, TF .
THIN SOLID FILMS, 1976, 36 (02) :435-439
[10]  
NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P759