Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 degrees C for 1 h. The TFTs with a 50 mu m channel length exhibited a high field-effect mobility of 0.45 cm (2)/(V.s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 10(6), respectively.