POINT-DEFECTS IN SILICON STUDIED BY NICKEL DIFFUSION

被引：21

作者：

KITAGAWA, H ^{[1
]}

HASHIMOTO, K ^{[1
]}

YOSHIDA, M ^{[1
]}

机构：

[1] KYUSHU INST DESIGN,MINAMI KU,FUKUOKA 815,JAPAN

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90268-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：323 / 327

页数：5

共 17 条

[1]

Damask A.C., 1963, POINT DEFECTS METALS

[2] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2275-2283

[3]

Friedel J., 1964, DISLOCATIONS

[4] DIFFUSION OF GOLD IN SILICON - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F ;

FRANK, W ;

SEEGER, A .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :157-159

[5] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J].

GOSELE, U ;

FRANK, W ;

SEEGER, A .

APPLIED PHYSICS, 1980, 23 (04) :361-368

[6]

GOSELE U, 1981, SEMICONDUCTOR SILICO

[7]

HETTICH G, 1979, I PHYS C SER, V46, P500

[8] DIFFUSION OF GOLD IN THIN SILICON SLICES [J].

HUNTLEY, FA ;

WILLOUGHBY, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (09) :1231-+

[9] DIFFUSION MECHANISM OF NICKEL AND POINT-DEFECTS IN SILICON [J].

KITAGAWA, H ;

HASHIMOTO, K ;

YOSHIDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :276-280

[10] NUMERICAL-SOLUTIONS OF BASIC EQUATIONS FOR KICK-OUT MECHANISM OF DIFFUSION [J].

KITAGAWA, H ;

HASHIMOTO, K ;

YOSHIDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03) :446-450

← 1 2 →