DEPTH-DEPENDENT ELECTRICAL CHARACTERIZATION OF SILICON WITH NONUNIFORMLY DISTRIBUTED DEFECTS

被引：0
|
作者：
RADZIMSKI, Z [1 ]
HONEYCUTT, J [1 ]
ROZGONYI, GA [1 ]
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 06期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C265 / C265
页数：1
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