POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACE

被引:9
作者
MARTINEZ, E
YNDURAIN, F
机构
来源
PHYSICAL REVIEW B | 1982年 / 25卷 / 10期
关键词
D O I
10.1103/PhysRevB.25.6511
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6511 / 6513
页数:3
相关论文
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