POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACE

被引：9
作者：
MARTINEZ, E
YNDURAIN, F
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.25.6511
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：6511 / 6513
页数：3
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