OBSERVATION OF STABLE ROOM-TEMPERATURE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON FOLLOWING LONG-TERM LIGHT SOAKING

被引：5

作者：

XI, J

MACNEIL, J

LIU, T

GHOSH, M

机构：

[1] Advanced Photovoltaic Systems Inc., Princeton, NJ 08543-7093

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 16期

关键词：

D O I：

10.1063/1.107116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intrinsic hydrogenated amorphous silicon exhibiting unchanged room-temperature photoconductivity of 1.5 x 10(-5) (OMEGA cm)-1 at 100 mW cm-2 after prolonged illumination and a photo-to-dark conductivity ratio over 10(6) is reported for the first time. Photoconductivity and CPM data in the as-deposited and light-soaked states, supported by dark conductivity and analytical measurements, suggest that the metastable midgap states in this material are significantly lower than levels previously reported.

引用

页码：1975 / 1977

页数：3

共 13 条

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