CAVITY LENGTH DEPENDENCE OF THE THRESHOLD BEHAVIOR IN THIN QUANTUM-WELL SEMICONDUCTOR-LASERS

被引：69

作者：

REISINGER, AR ^{[1
]}

ZORY, PS ^{[1
]}

WATERS, RG ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ASTRONAUT CO,CTR OPTOELECTR,ELMSFORD,NY 10523

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：993 / 999

页数：7

共 26 条

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[25] ANOMALOUS LENGTH DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS [J].

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EMANUEL, MA ;

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ELECTRONICS LETTERS, 1986, 22 (09) :475-477

[26] ANOMALOUS TEMPERATURE-DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS [J].

ZORY, PS ;

REISINGER, AR ;

WATERS, RG ;

MAWST, LJ ;

ZMUDZINSKI, CA ;

EMANUEL, MA ;

GIVENS, ME ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1986, 49 (01) :16-18

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