PHOTOCONDUCTIVITY AND RECOMBINATION DYNAMICS FOR A-SI-H AT DIFFERENT THICKNESSES

被引：0

作者：

YE, YGJ

ANDERSON, WA

机构：

来源：

SOLAR CELLS | 1988年 / 25卷 / 02期

关键词：

D O I：

10.1016/0379-6787(88)90021-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：169 / 179

页数：11

共 10 条

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MORT J, 1976, PHTOOCONDUCTIVITY RE, P199

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Rose A., 1978, CONCEPTS PHOTOCONDUC, V2nd ed.

[9] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS [J].

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[10] THICKNESS DEPENDENCE OF PHOTOELECTRICAL PROPERTIES OF INTRINSIC AMORPHOUS-SILICON [J].

YE, YGJ ;

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TSUO, YS .

SOLAR CELLS, 1988, 23 (3-4) :191-199

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