A THEORETICAL-ANALYSIS OF THE RELAXATION OF AN OPEN-CIRCUIT PHOTOPOTENTIAL IN A HIGHLY BIASED N-TYPE SEMICONDUCTOR ELECTRODE .1. NO INTERFACIAL ELECTRON OR HOLE TRANSFER

被引：29

作者：

GOTTESFELD, S ^{[1
]}

FELDBERG, SW ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,DEPT ENERGY & ENVIRONM,DIV CHEM SCI,UPTON,NY 11973

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1983年 / 146卷 / 01期

关键词：

D O I：

10.1016/S0022-0728(83)80112-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：47 / 69

页数：23

共 14 条

[1]

Delahay P., 1954, NEW INSTRUMENTAL MET

[2]

Hamming RW, 1962, NUMERICAL METHODS SC

[3] THE MEASUREMENT OF FAST TRANSIENTS IN THE CDSE-S=, S-DEGREES PHOTOELECTROCHEMICAL CELL [J].

HARZION, Z ;

CROITORU, N ;

GOTTESFELD, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :551-554

[4]

HARZION Z, UNPUB J ELECTROANAL

[5] TIME-RESOLVED PHOTOCURRENT AT THE MOSE2-I PHOTOELECTRODE STUDIED WITH A NANOSECOND PULSED LASER [J].

KAWAI, T ;

TRIBUTSCH, H ;

SAKATA, T .

CHEMICAL PHYSICS LETTERS, 1980, 69 (02) :336-339

[6] SEMICONDUCTOR ELECTRODES .8. DIGITAL-SIMULATION OF OPEN-CIRCUIT PHOTOPOTENTIALS [J].

LASER, D ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1833-1837

[7] SEMICONDUCTOR ELECTRODES .7. DIGITAL-SIMULATION OF CHARGE INJECTION AND ESTABLISHMENT OF SPACE-CHARGE REGION IN ABSENCE AND PRESENCE OF SURFACE-STATES [J].

LASER, D ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1828-1832

[8] SEMICONDUCTOR ELECTRODES .9. DIGITAL-SIMULATION OF RELAXATION OF PHOTOGENERATED FREE CARRIERS AND PHOTOCURRENTS [J].

LASER, D ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1837-1842

[9]

Many A., 1965, SEMICONDUCTOR SURFAC

[10]

PERONE SP, J ELECTROCHEM SOC

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