EVALUATION OF VARIOUS ELECTRODE METALS FOR ULTRAHIGH PURITY P-TYPE SI SURFACE-BARRIER DETECTORS

被引：3

作者：

TAKAMI, Y

SHIRAISHI, F

HOSOE, M

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 01期

关键词：

D O I：

10.1109/TNS.1984.4333272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：340 / 343

页数：4

相关论文

共 12 条

[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[2] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &
[3] SURFACE BARRIER STRUCTURES WITH VARIOUS METAL ELECTRODES
INSKEEP, C
ELAD, E
SAREEN, RA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 379 - 385
[4] FABRICATION OF SURFACE-BARRIER NUCLEAR PARTICLE DETECTORS FROM P-TYPE SILICON
MATHEW, PJ
CHAPMAN, NG
COOTE, GE
[J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 49 (02): : 245 - &
[5] Rhoderick E H, 1980, METAL SEMICONDUCTOR
[6] SURFACE-BARRIER DETECTORS MADE OF ULTRAHIGH PURITY P-TYPE SILICON-CRYSTALS
SHIRAISHI, F
TAKAMI, Y
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 196 (01): : 137 - 141
[7] TOTALLY DEPLETED SURFACE-BARRIER DETECTORS MADE OF ULTRAHIGH PURITY P-TYPE SILICON-CRYSTALS
SHIRAISHI, F
HOSOE, M
TAKAMI, Y
OHSAWA, Y
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (01) : 775 - 778
[8] SHIRAISHI F, 1983, MAT RES SOC S P, V16, P175
[9] SCHOTTKY BARRIERS ON P-TYPE SILICON
SMITH, BL
RHODERICK, EH
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 71 - +
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO