ELECTRICAL TRAPS IN GAAS MICROWAVE FETS

被引:26
作者
ADLERSTEIN, MG [1 ]
机构
[1] RAYTHEON RES DIV,WALTHAM,MA 02154
关键词
D O I
10.1049/el:19760229
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:297 / 298
页数:2
相关论文
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[5]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
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[6]  
Milnes A. G., 1973, DEEP IMPURITIES SEMI