PHOTOINDUCED SCREENING OF THE EXCITONIC INTERACTION IN ZNSE-ZNTE TYPE-II STRAINED-LAYER SUPERLATTICES

被引：2

作者：

GIL, B

CLOITRE, T

BRIOT, N

BRIOT, O

BORING, P

AULOMBARD, RL

机构：

[1] Groupe d'Etudes des Semiconducteurs, Université de Montpellier II, F-34095 Montpellier Cedex 5, Place Eugene Bataillon

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90922-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the observation of nonlinear optical properties of ZnSe-ZnTe superlattices under photo-injected carriers, at pumped liquid helium temperature. Identification of several transitions measured by transmission on samples grown by metalorganic vapour phase epitaxy and etched away from the GaAs substrate is made in the context of the envelope function approach. This reveals that the conduction to valence band line-ups are type II in these samples. This situation is invoked in order to interpret the efficiency of the exciton screening.

引用

页码：868 / 872

页数：5

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