VERTICAL TUNNELING BETWEEN 2 QUANTUM DOTS IN A TRANSVERSE MAGNETIC-FIELD

被引：18

作者：

TEWORDT, M ^{[1
]}

HUGHES, RJF ^{[1
]}

MARTINMORENO, L ^{[1
]}

NICHOLLS, JT ^{[1
]}

ASAHI, H ^{[1
]}

KELLY, MJ ^{[1
]}

LAW, VJ ^{[1
]}

RITCHIE, DA ^{[1
]}

FROST, JEF ^{[1
]}

JONES, GAC ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.49.8071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by the combined sidewall confinement and vertical confinement in an AlxGa1-xAs-GaAs triple-barrier diode with a conducting diameter of 180 nm. The fine structure that is observed in the main resonance peaks of the current-voltage characteristics is related to lateral quantization effects. Electrons tunnel between zero-dimensional (OD) states in the two coupled quantum dots. A magnetic field applied perpendicular (transverse) to the tunneling direction shifts the main (2D) resonance peaks to higher bias and causes a substantial broadening. Within the fine structure we find that the resonance positions are virtually magnetic-field independent, whereas the resonance amplitudes show significant variations with increasing magnetic field; a simple model is developed to describe this behavior in terms of the magnetic-field dependence of the interdot transition probabilities.

引用

页码：8071 / 8075

页数：5

共 29 条

[1] TUNNELING BETWEEN TOTALLY QUANTIZED LEVELS IN GAAS/ALGAAS ASYMMETRIC TRIPLE-BARRIER HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS [J].

ASAHI, H ;

TEWORDT, M ;

SYME, RT ;

KELLY, MJ ;

LAW, VJ ;

MACE, DR ;

FROST, JEF ;

RITCHIE, DA ;

JONES, GAC ;

PEPPER, M .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :803-805

[2] SINGLE-ELECTRON CAPACITANCE SPECTROSCOPY OF DISCRETE QUANTUM LEVELS [J].

ASHOORI, RC ;

STORMER, HL ;

WEINER, JS ;

PFEIFFER, LN ;

PEARTON, SJ ;

BALDWIN, KW ;

WEST, KW .

PHYSICAL REVIEW LETTERS, 1992, 68 (20) :3088-3091

[3] TRANSVERSE MAGNETIC-FIELD DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-BARRIER QUANTUM WELL TUNNELING STRUCTURES [J].

BENAMOR, S ;

MARTIN, KP ;

RASCOL, JJL ;

HIGGINS, RJ ;

TORABI, A ;

HARRIS, HM ;

SUMMERS, CJ .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2540-2542

[4] RESONANT TUNNELING THROUGH COUPLED, DOUBLE-QUANTUM-BOX NANOSTRUCTURES [J].

BRYANT, GW .

PHYSICAL REVIEW B, 1991, 44 (07) :3064-3069

[5] NONADIABATIC TRANSPORT THROUGH QUANTUM DOTS [J].

BRYANT, GW .

PHYSICAL REVIEW B, 1991, 44 (23) :12837-12847

[6] RESONANT TUNNELING IN ZERO-DIMENSIONAL NANOSTRUCTURES [J].

BRYANT, GW .

PHYSICAL REVIEW B, 1989, 39 (05) :3145-3152

[7] ELECTRONS IN COUPLED VERTICAL QUANTUM DOTS - INTERDOT TUNNELING AND COULOMB CORRELATION [J].

BRYANT, GW .

PHYSICAL REVIEW B, 1993, 48 (11) :8024-8034

[8] RESONANT TUNNELING THROUGH THE BOUND-STATES OF A SINGLE DONOR ATOM IN A QUANTUM-WELL [J].

DELLOW, MW ;

BETON, PH ;

LANGERAK, CJGM ;

FOSTER, TJ ;

MAIN, PC ;

EAVES, L ;

HENINI, M ;

BEAUMONT, SP ;

WILKINSON, CDW .

PHYSICAL REVIEW LETTERS, 1992, 68 (11) :1754-1757

[9]

EAVES L, 1990, SPRINGER SERIES SOLI, V101, P645

[10]

GOBATO YG, 1991, PHYS REV B, V44, P13795, DOI 10.1103/PhysRevB.44.13795

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