IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS

被引：19

作者：

MANNOH, M ^{[1
]}

NOMURA, Y ^{[1
]}

SHINOZAKI, K ^{[1
]}

MIHARA, M ^{[1
]}

ISHII, M ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.336545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1092 / 1095

页数：4

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